Как подобрать замену для mosfet-транзистора

FQD6N50C Datasheet (PDF)

1.1. fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi

October 2008
QFET
FQD6N50C / FQU6N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 19nC)
planar stripe, DMOS technology.
• Low Crss (typical 15pF)
This advanced technology has been especially t

5.1. fqd6n60c.pdf Size:678K _fairchild_semi

QFET
FQD6N60C
600V N-Channel MOSFET
Features Description
• 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
• Low gate charge ( typical 16 nC )
stripe, DMOS technology.
This advanced technology has been especially tailored to
• Low Crss ( typical 7 pF)
minimize on-s

5.2. fqd6n60ctm.pdf Size:679K _fairchild_semi

5.3. fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi

October 2008
QFET
FQD6N25 / FQU6N25
250V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.4A, 250V, RDS(on) = 1.0Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 7.5 pF)
This advanced technology has been especia

5.4. fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Size:654K _fairchild_semi

October 2008
QFET
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC)
planar stripe, DMOS technology.
• Low Crss ( typical 15pF)
This advanced technology has been especiall

5.5. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET
FQD6N40 / FQU6N40
400V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 9.5 pF)
This advanced technolog

CS20N50_ANH Datasheet (PDF)

1.1. cs20n50 a8h.pdf Size:352K _crhj

Silicon N-Channel Power MOSFET R
○
CS20N50 A8H
General Description：
VDSS 500 V
CS20N50 A8H, the silicon N-channel Enhanced
ID 20 A
PD (TC=25℃) 230 W
VDMOSFETs, is obtained by the self-aligned planar Technology
RDS(ON)Typ 0.25 Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various p

1.2. cs20n50 anh.pdf Size:363K _crhj

Silicon N-Channel Power MOSFET R
○
CS20N50 ANH
General Description：
VDSS 500 V
CS20N50 ANH, the silicon N-channel Enhanced
ID 20 A
PD (TC=25℃) 230 W
VDMOSFETs, is obtained by the self-aligned planar Technology
RDS(ON)Typ 0.25 Ω
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various po

3.1. cs20n50anh.pdf Size:363K _update_mosfet

3.2. cs20n50a8h.pdf Size:352K _update_mosfet

FTK50N06P Datasheet (PDF)

1.1. ftk50n06 ftk50n06p f.pdf Size:222K _first_silicon

SEMICONDUCTOR
FTK50N06P / F
TECHNICAL DATA
Power MOSFET
50 Amps, 60 Volts
N-CHANNEL POWER MOSFET
P :
1
TO-220
DESCRIPTION
The FTK50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
F :
threshold voltages of 4 volt.
1
It is mainly suitable electronic

2.1. ftk50n06.pdf Size:222K _upd-mosfet

2.2. ftk50n06d.pdf Size:336K _first_silicon

SEMICONDUCTOR
FTK50N06D
TECHNICAL DATA
N-Channel Power MOSFET
A
I
C
J
GENERAL DESCRIPTION
The FTK50N06D uses advanced trench technology and design to DIM MILLIMETERS
A 6 50 ± 0 2
provide excellent RDS(ON) with low gate charge.
B 5 60 ± 0 2
C 5 20 ± 0 2
It can be used in awide variety of applications.
D 1 50 ± 0 2
E 2 70 ± 0 2
F 2 30 ± 0 1
H
H 1 00 MAX
I 2 30 ± 0

2.3. ftk50n06dd.pdf Size:255K _first_silicon

SEMICONDUCTOR
FTK50N06DD
TECHNICAL DATA
N-Channel Power MOSFET (60V/50A)
Purpose
Suited for low voltage applications such as automotive,
DC/DC Converters, and high efficiency switching
for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low Crss,fast switching.
Absolute maximum ratings(Ta=25℃)
Rating
Symbol Unit
V 60 V
DSS

CEP50N06 Datasheet (PDF)

1.1. cep50n06 ceb50n06.pdf Size:370K _upd-mosfet

CEP50N06/CEB50N06
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 50A ,RDS(ON) = 17mΩ (typ) @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
G
CEB SERIES
CEP SERIES
S
TO-263(DD-PAK)
TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

1.2. cep50n06 ceb50n06.pdf Size:370K _cet

4.1. cep50n10 ceb50n10.pdf Size:446K _cet

CEP50N10/CEB50N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 50A, RDS(ON) = 30mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D
Lead free product is acquired.
TO-220 & TO-263 package.
G
CEB SERIES
CEP SERIES
S
TO-263(DD-PAK)
TO-220
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

RFG50N06 Datasheet (PDF)

1.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet January 2002
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilization of silico

1.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

RFG50N06LE, RFP50N06LE, RF1S50N06LESM
Data Sheet October 1999 File Number 4072.3
50A, 60V, 0.022 Ohm, Logic Level Features
N-Channel Power MOSFETs
• 50A, 60V
These N-Channel enhancement mode power MOSFETs are
• rDS(ON) = 0.022Ω
manufactured using the latest manufacturing process
• Temperature Compensating PSPICE Model
technology. This process, which uses feature sizes
approa

3.1. rfg50n05l rfp50n05l.pdf Size:51K _intersil

RFG50N05L, RFP50N05L
Data Sheet July 1999 File Number 2424.3
50A, 50V, 0.022 Ohm, Logic Level, Features
N-Channel Power MOSFETs
• 50A, 50V
These are logic-level N-channel power MOSFETs
• rDS(ON) = 0.022Ω
manufactured using the MegaFET process. This process,
• UIS SOA Rating Curve (Single Pulse)
which uses feature sizes approaching those of LSI
integrated circuits gives optimum

FQPF13N50C MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQPF13N50C

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 195
W

Предельно допустимое напряжение сток-исток (Uds): 500
V

Предельно допустимое напряжение затвор-исток (Ugs): 30
V

Пороговое напряжение включения Ugs(th): 4
V

Максимально допустимый постоянный ток стока (Id): 13
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 56
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.48
Ohm

Тип корпуса: TO220F

FQPF13N50C
Datasheet (PDF)

1.1. fqp13n50c fqpf13n50c.pdf Size:1062K _fairchild_semi

November 2013
FQP13N50C / FQPF13N50C
N-Channel QFET MOSFET
500 V, 13 A, 480 mΩ
Description
Features
These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V,
•
transistors are produced using Fairchild’s proprietary, ID = 6.5 A
planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC)
technology has been especia

1.2. fqpf13n50 fqpf13n50t.pdf Size:880K _fairchild_semi

TM
QFET
FQP13N50/FQPF13N50
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 12.5A, 500V, RDS(on) = 0.43Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 25 pF)
This advanced technology has been especially tailored

1.3. fqp13n50 fqpf13n50.pdf Size:883K _fairchild_semi

1.4. fqp13n50cf fqpf13n50cf.pdf Size:1148K _fairchild_semi

May 2006
TM
FRFET
FQP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
Features Description
• 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 43 nC)
DMOS technology.
• Low Crss (typical 20pF)
This advanced technology has been especially t

1.5. fqpf13n50csdtu fqpf13n50ct.pdf Size:891K _fairchild_semi

TM
QFET
FQP13N50C/FQPF13N50C
500V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 20pF)
This advanced technology has been especially tailored t

1.6. fqp13n50c fqpf13n50c.pdf Size:922K _fairchild_semi

1.7. fqpf13n50c.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor FQPF13N50C
·FEATURES
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·Load switch
·Power management
·ABSOLUTE MAXIMUM RATINGS(T =25

Другие MOSFET… FQP13N50
, FQP14N30
, FQP16N25
, FQP17N40
, FDD6688
, FQP17P06
, FQP17P10
, FQP19N20
, IRF1405
, FQP19N20C
, FQPF12N60C
, FQP20N06
, FQP20N06L
, FQP22N30
, FQP24N08
, FQP27N25
, FQP27P06
.

AOT8N50 Datasheet (PDF)

1.1. aot8n50.pdf Size:159K _aosemi

AOT8N50/AOTF8N50
500V, 8A N-Channel MOSFET
General Description Product Summary
VDS
600V@150℃
The AOT8N50 & AOTF8N50 have been fabricated using
an advanced high voltage MOSFET process that is
ID (at VGS=10V) 8A
designed to deliver high levels of performance and
RDS(ON) (at VGS=10V) 5.1. aot8n60.pdf Size:441K _aosemi

AOT8N60/AOTF8N60
600V,8A N-Channel MOSFET
General Description Product Summary
VDS
700V@150℃
The AOT8N60 & AOTF8N60 have been fabricated using
an advanced high voltage MOSFET process that is
ID (at VGS=10V) 8A
designed to deliver high levels of performance and
RDS(ON) (at VGS=10V) 5.2. aot8n80.pdf Size:349K _aosemi

AOT8N80/AOTF8N80
800V, 7.4A N-Channel MOSFET
General Description Product Summary
VDS
900V@150℃
The AOT8N80 & AOTF8N80 have been fabricated using
an advanced high voltage MOSFET process that is
ID (at VGS=10V) 7.4A
designed to deliver high levels of performance and
RDS(ON) (at VGS=10V)

5.3. aot8n65.pdf Size:154K _aosemi

AOT8N65/AOTF8N65
650V, 8A N-Channel MOSFET
General Description Product Summary
VDS
750V@150℃
The AOT8N65 & AOTF8N65 have been fabricated using
an advanced high voltage MOSFET process that is
ID (at VGS=10V) 8A
designed to deliver high levels of performance and
RDS(ON) (at VGS=10V)

RFP50N06 Datasheet (PDF)

1.1. rfg50n06 rfp50n06 rf1s50n06sm.pdf Size:373K _fairchild_semi

1.2. rfg50n06le rfp50n06le rf1s50n06lesm.pdf Size:154K _intersil

1.3. rfp50n06.pdf Size:74K _intersil

RFG50N06, RFP50N06, RF1S50N06SM
Data Sheet July 1999 File Number 3575.4
50A, 60V, 0.022 Ohm, N-Channel Power Features
MOSFETs
• 50A, 60V
These N-Channel power MOSFETs are manufactured using
• rDS(ON) = 0.022Ω
the MegaFET process. This process, which uses feature
• Temperature Compensating PSPICE Model
sizes approaching those of LSI integrated circuits gives
optimum utilizati

1.4. rfp50n06.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor RFP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
· Designed for use in applications such as swithing
Regulators,switc

FQP50N06L Datasheet (PDF)

1.1. fqp50n06l.pdf Size:694K _fairchild_semi

May 2001
TM
QFET
FQP50N06L
60V LOGIC N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 24.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 90 pF)
This advanced technology has been especially t

1.2. fqp50n06l.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06L
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies

2.1. fqp50n06.pdf Size:644K _fairchild_semi

TM
QFET
FQP50N06
60V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 31 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 65 pF)
This advanced technology has been especially tailored to
• Fast

2.2. fqp50n06.pdf Size:231K _inchange_semiconductor

isc N-Channel MOSFET Transistor FQP50N06
DESCRIPTION
·Drain Current I =50A@ T =25℃
D C
·Drain Source Voltage-
: V =60V(Min)
DSS
·Static Drain-Source On-Resistance
: R = 22mΩ(Max)
DS(on)
·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·High current , high speed switching
·Switch mode power supplies

P50N03LTG Datasheet (PDF)

1.1. p50n03ltg.pdf Size:490K _unikc

P50N03LTG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
10mΩ @VGS = 10V
25V 60A
TO-220
ABSOLUTE MAXIMUM RATINGS (TC = 25 °
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
VGS
Gate-Source Voltage ±20 V
TC = 25 °
C
60
ID
Continuous Drain Current
TC = 100 °
C
38
A
IDM
150
Pulsed Drain Current1
IAS
Avalanche

2.1. phb50n03lt phd50n03lt php50n03lt 7.pdf Size:111K _philips

Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHP50N03LT, PHB50N03LT
Logic level FET PHD50N03LT
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology d VDSS = 25 V
• Very low on-state resistance
• Fast switching ID = 48 A
• High thermal cycling performance
• Low thermal resistance RDS(ON) ≤ 16 mΩ (VGS = 10 V)
g
• Logic leve

4.1. sup50n03-5m1p.pdf Size:178K _update_mosfet

SUP50N03-5m1P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.)
Definition
0.0051 at VGS = 10 V
50d
• TrenchFET Power MOSFET
30 21.7
0.0063 at VGS = 4.5 V
50d
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Supply
— Seco

4.2. php50n03t 1.pdf Size:49K _philips

Philips Semiconductors Product specification
TrenchMOS transistor PHP50N03T
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using VDS Drain-source voltage 30 V
’trench’ technology. The device ID Drain current (DC) 50 A
features very low on-state r

4.3. sup50n03.pdf Size:177K _vishay

FQP50N06 Datasheet (PDF)

1.1. fqp50n06l.pdf Size:694K _fairchild_semi

1.2. fqp50n06.pdf Size:644K _fairchild_semi

1.3. fqp50n06l.pdf Size:230K _inchange_semiconductor

1.4. fqp50n06.pdf Size:231K _inchange_semiconductor

MDF9N50FTH Datasheet (PDF)

1.1. mdf9n50fth.pdf Size:817K _magnachip

MDF9N50F
N-Channel MOSFET 500V, 8.0 A, 0.9Ω
General Description Features
The MDF9N50F uses advanced Magnachip’s
 V = 500V
DS
MOSFET Technology, which provides low on-state  I = 8.0A @V = 10V
D GS
resistance, high switching performance and  RDS(ON) ≤ 0.9Ω @VGS = 10V
excellent quality.
Applications
MDF9N50F is suitable device for SMPS, HID and
general purp

3.1. mdf9n50bth mdp9n50bth.pdf Size:1150K _magnachip

MDP9N50B / MDF9N50B
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description Features
The MDP/F9N50B uses advanced Magnachip’s VDS = 500V
MOSFET Technology, which provides low on-state
ID = 9.0A @VGS = 10V
resistance, high switching performance and
RDS(ON) ≤ 0.85Ω @VGS = 10V
excellent quality.
MDP/F9N50B is suitable device for SMPS, HID and
Applications
general purpo

5.1. mdf9n60bth.pdf Size:781K _magnachip

MDF9N60B
N-Channel MOSFET 600V, 9A, 0.80Ω
Ω
Ω
Ω
General Description Features
These N-channel MOSFET are produced using advanced VDS = 600V
MagnaChip’s MOSFET Technology, which provides low on- ID = 9.0A @ VGS = 10V
state resistance, high switching performance and excellent RDS(ON) ≤ 0.80Ω @ VGS = 10V
quality.
Applications
These devices are suitable device for SMP

FQPF10N50CF Datasheet (PDF)

1.1. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

December 2006
TM
FRFET
FQP10N50CF / FQPF10N50CF
500V N-Channel MOSFET
Features Description
• 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 43 nC)
DMOS technology.
• Low Crss (typical 16pF)
This advanced technology has been espe

3.1. fqpf10n20.pdf Size:764K _fairchild_semi

April 2000
TM
QFET
QFET
QFET
QFET

200V N-ChanneI MOSFET
GeneraI Description Features
These N-Channel enhancement mode power field effect • 6.8A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 13 pF)
This advanced technology has be

3.2. fqpf10n60ct fqpf10n60cydtu.pdf Size:1020K _fairchild_semi

April 2007

QFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
Features Description
• 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 44 nC)
DMOS technology.
• Low Crss ( typical 18 pF)
This advanced technology has been especiall

3.3. fqp10n20c fqpf10n20c.pdf Size:875K _fairchild_semi

TM
QFET
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description Features
These N-Channel enhancement mode power field effect • 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V
transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC)
planar stripe, DMOS technology.
• Low Crss ( typical 40.5 pF)
This advanced technology has been especially tailor

3.4. fqp10n60c fqpf10n60c.pdf Size:1122K _fairchild_semi

April 2007

3.5. fqp10n60cf fqpf10n60cf.pdf Size:933K _fairchild_semi

February 2007
TM
FRFET
FQP10N60CF / FQPF10N60CF
600V N-Channel MOSFET
Features Description
• 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge ( typical 44 nC)
DMOS technology.
• Low Crss ( typical 18 pF)
This advanced technology has been especia

3.6. fqpf10n20c.pdf Size:201K _inchange_semiconductor

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor FQPF10N20C
·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(T =25℃)
a
SYMBOL PARAMETER VALUE UNIT
V Drain-Source Voltage 200 V
DSS
V Gat

SFP50N06 Datasheet (PDF)

1.1. sfp50n06r.pdf Size:747K _upd-mosfet

SFP50N06R
SFP50N06R
SFP50N06R
SFP50N06R
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
� R (Max0.023Ω)@V =10V
DS(on) GS
� Gate Charge(Typical 25nC)
� Maximum Junction Temperature Range(175℃)
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based
process. This technology improv

1.2. sfp50n06.pdf Size:476K _upd-mosfet

SFP50N06
SFP50N06
SFP50N06
SFP50N06
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Silicon N-Channel MOSFET
Features
■ R (Max 22mΩ)@V =10V
DS(on) GS
■ Ultra-low Gate Charge(Typical 31nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Win

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